features trenchfet power mosfets 175 c junction temperature new low thermal resistance package applications industrial sup40n25-60 vishay siliconix new product document number: 73132 s-42076?rev. a, 15-nov-04 www.vishay.com 1 n-channel 250-v (d-s) 175 c mosfet product summary v (br)dss (v) r ds(on) ( ) i d (a) q g (typ) 250 0.060 @ v gs = 10 v 40 95 250 0.064 @ v gs = 6 v 38.7 95 to-220ab top view gd s ordering information: sup40n25-60?e3 n-channel mosfet g d s absolute maximum ratings (t c = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 250 gate-source voltage v gs 30 v continuous drain current (t j = 175 c) t c = 25 c i d 40 continuous drain current (t j = 175 c) t c = 125 c i d 23 a pulsed drain current i dm 70 a avalanche current i ar 35 repetitive a valanche energy a l = 0.1 mh e ar 61 mj maximum power dissipation a t c = 25 c p d 300 b w maximum power dissipation a t a = 25 c c p d 3.75 w operating junction and storage temperature range t j , t stg ? 55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (pcb mount) c r thja 40 c/w junction-to-case (drain) r thjc 0.5 c/w notes a. duty cycle 1%. b. see soa curve for voltage derating. c. when mounted on 1? square pcb (fr-4 material).
sup40n25-60 vishay siliconix new product www.vishay.com 2 document number: 73132 s-42076?rev. a, 15-nov-04 specifications (t j =25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v ds = 0 v, i d = 250 a 250 v gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 2 4 v gate-body leakage i gss v ds = 0 v, v gs = 30 v 250 na v ds = 250 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 250 v, v gs = 0 v, t j = 125 c 50 a g dss v ds = 250 v, v gs = 0 v, t j = 175 c 250 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 70 a v gs = 10 v, i d = 20 a 0.049 0.060 drain source on state resistance a r ds( ) v gs = 10 v, i d = 20 a, t j = 125 c 0.121 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 20 a, t j = 175 c 0.163 v gs = 6 v, i d = 15 a, 0.051 0.064 forward transconductance a g fs v ds = 15 v, i d = 20 a 70 s dynamic b input capacitance c iss 5000 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 300 pf reverse transfer capacitance c rss 170 total gate charge c q g 95 140 gate-source charge c q gs v ds = 125 v, v gs = 10 v, i d = 45 a 28 nc gate-drain charge c q gd ds , gs , d 34 gate resistance r g f = 1 mhz 1.6 turn-on delay time c t d(on) 22 35 rise time c t r v dd = 100 v, r l = 2.78 220 330 ns turn-off delay time c t d(off) v dd = 100 v , r l = 2 . 78 i d 45 a, v gen = 10 v, r g = 2.5 40 60 ns fall time c t f 145 220 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s 45 a pulsed current i sm 70 a forward voltage a v sd i f = 45 a, v gs = 0 v 1.0 1.5 v reverse recovery time t rr 150 225 ns peak reverse recovery current i rm(rec) i f = 45 a, di/dt = 100 a/ s 12 18 a reverse recovery charge q rr 0.9 2 c notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratin gs only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability.
sup40n25-60 vishay siliconix new product document number: 73132 s-42076?rev. a, 15-nov-04 www.vishay.com 3 typical characteristics (25 c unless noted) 0 1000 2000 3000 4000 5000 6000 7000 0 40 80 120 160 200 0 4 8 12 16 20 0 30 60 90 120 150 180 0 30 60 90 120 150 0 102030405060 0.00 0.02 0.04 0.06 0.08 0.10 0 20406080100 0 20 40 60 80 100 0123456 0 20 40 60 80 100 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs ? transconductance (s) g fs 25 c ? 55 c t c = 125 c v ds = 125 v i d = 45 a v gs = 10 thru 7 v v gs = 6 v c iss c oss t c = ? 55 c 25 c 125 c 4 v ? on-resistance ( r ds(on) ) ? drain current (a) i d i d ? drain current (a) 6 v c rss 5 v v gs = 10 v
sup40n25-60 vishay siliconix new product www.vishay.com 4 document number: 73132 s-42076?rev. a, 15-nov-04 typical characteristics (25 c unless noted) drain source breakdown vs. junction t emperature avalanche current vs. time 0.4 0.8 1.2 1.6 2.0 2.4 2.8 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) ? source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 v gs = 10 v i d = 20 a t j = 25 c t j = 150 c 0 230 240 250 260 270 280 290 300 ? 50 ? 25 0 25 50 75 100 125 150 175 t j ? junction temperature ( c) t in (sec) 100 10 0.00001 0.001 0.1 1 0.1 (a) i dav 0.01 i av (a) @ t a = 150 c (v) v (br)dss i d = 1.0 ma 1 0.0001 i av (a) @ t a = 25 c r ds(on) ? on-resiistance (normalized)
sup40n25-60 vishay siliconix new product document number: 73132 s-42076?rev. a, 15-nov-04 www.vishay.com 5 thermal ratings 0 10 20 30 40 50 0 25 50 75 100 125 150 175 safe operating area, case temperature 100 10 0.1 1 10 1000 *limited by r ds(on) 0.001 t c = 25 c single pulse maximum avalanche and drain current vs. case t emperature t c ? ambient t emperature ( c) ? drain current (a) i d normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 1 normalized effective transient thermal impedance 0.2 0.1 duty cycle = 0.5 ? drain current (a) i d 1 ms 10 ms, 100 ms, dc 10 s 100 s single pulse 0.05 0.02 1 100 0.1 0.01 v ds ? drain-to-source voltage (v) *v gs minimum v gs at which r ds(on) is specified vishay siliconix maintains worldw ide manufacturing c apability. pr oducts may be manufactured at on e of several qualified locati ons. reliability data for silicon technology and package reliability repr esent a composite of all qualified locations. for re lated documents such as package/tape drawings, par t marking, and reliability data, see http://www.vishay.com/ppg?73132 .
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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